Reactive Ion Etching (RIE) is a plasma etching technology used to fabricate micro and nanostructures. During RIE etching processes, volatile compounds are formed in interaction of sample surfaces and high-energy ions/radicals generated by low-pressure plasma. The volatile compounds are removed from the sample surfaces, and isotropic or anisotropic profile is achieved.
Process gasses in use: CF4, CHF3, SF6, AR, O2
300W RF power supply
Useful for etching of SiO2, Si3N4, Si, etc.